In As/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an\ninfrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over\npresent-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology\npromising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the\nT2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL\ndetectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components.\nVarious approaches of dark current reduction with their pros and cons are presented.
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